United Silicon Carbide UF3C High-Performance SiC FETs are cascode products that co-package high-performance G3 SiC JFETs with a cascode optimized Si MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge and are excellent for switching inductive loads, and any application requiring standard gate drive. They are available in 650V and 1200V versions and come in TO-247-3L, TO-247-4L, and D²PAK-3L packages. Typical applications include EV charging, PV inverters, switch mode power supplies, power factor correction modules, motor drives, and induction heating.
Features
Excellent body diode performance (Vf <2V)Drive with any Si and/or SiC gate drive voltageHigh performance cascode configurationEasy drop-in replacement for IGBTs, Si, and other SiC MOSFETsInnovative cascode configuration enables Si and SiC gate voltage compatibilityExcellent reverse recoverySuperior thermal performanceIntegrated ESD and gate protection
Applications
Electric VehiclesBattery ChargersTelecom and Server PSUs
