ON Semiconductor NTMYS010N04CL 40V Industrial Power MOSFET features a small 5mm x 6mm footprint, low RDS(on), low Gate Charge (QG), and low capacitance. The low RDS(on) value helps to minimize conduction losses and the low QG and low capacitance minimizes driver losses. This single N-channel power MOSFET is Pb free, RoHS compliant, and features a wide, industrial-grade -55°C to +175°C operating temperature range.
Features
Low R
DS(on) to Minimize Conduction Losses10.3mΩ @ 10V17.6mΩ @ 4.5VContinuous Drain (I
D): 38A MaximumDrain-to-Source Voltage (V
DSS): 40VGate-to-Source Voltage (V
GS): ±20VBody Diode Source Current (I
S): 24ALow Total Gate Charge (Q
G(TOT)): 7.3nC
Applications
Switch Mode Power SuppliesSolar InvertersUninterruptible Power Supplies
