ON Semiconductor FDMS4D5N08LC 80V Single N-Channel Power MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best-in-class soft body diode.
Features
Shielded Gate MOSFET TechnologyMax R
DS(on) = 4.2mΩ @ V
GS = 10V, ID = 37AMax R
DS(on) = 6.1mΩ @ V
GS = 4.5V, ID = 29ADrain to Source Voltage (V
DS): 80V @ Continuous T
C = 25°CDrain Current (I
D): 116A Low Reverse Recovery Charge (Q
rr): 38nC TypicalLowers Switching Noise/EMIMSL1 Robust Package Design
Applications
Primary DC-DC MOSFETsSynchronous Rectifiers in DC-DC and AC-DC
