Nexperia MJD31C and MJD32C 100V 3A Bipolar Junction Transistors (BJT) offer high thermal power dissipation in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. These devices offer high energy efficiency due to low heat generation, and feature low collector emitter saturation voltage. The MJD31C and MJD32C are ideal for a wide variety of applications including linear voltage regulators, power management, and constant current drive backlighting.
Features
High Thermal Power Dissipation CapabilityHigh Energy Efficiency Due to Low Heat GenerationPolarityMJD32C: PNPMJD31C: NPNApplications
Power ManagementLoad SwitchConstant Current Drive Backlighting ApplicationDatasheets
MJD31C 100V 3A NPN Power Bipolar Transistor