GaN Systems GS665xxT GaN E-HEMT Daughter Boards are designed to work with the GS665MB-EVB 650V Universal Motherboard. The GS665xxT Daughter Boards each consist of two GaN Systems 650V GaN Enhancement-mode HEMTs (E-HEMTs) and all necessary circuits including half bridge gate drivers, isolated power supplies, and an optional heatsink to form a functional half bridge power stage. Developers can easily evaluate the GaN E-HEMT performance in any half bridge-based topology when used with the GS665MB-EVB Universal Motherboard.
Features
Serves as a reference design and evaluation tool as well as deployment-ready solution for easy insystem evaluationVertical mount style with height of 35mm, which fits in majority of 1U design and allows evaluation of GaN E-HEMT in traditional through-hole type power supply board
Design Resources
Gerber Design File
